Aluminum-nickel Silicide Contacts on Silicon - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Aluminum-nickel Silicide Contacts on Silicon write by Ender Hökelek. This book was released on 1978. Aluminum-nickel Silicide Contacts on Silicon available in PDF, EPUB and Kindle.
Nickel Silicide Contact for Copper Plated Silicon Solar Cells
Nickel Silicide Contact for Copper Plated Silicon Solar Cells - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Nickel Silicide Contact for Copper Plated Silicon Solar Cells write by Harsh Narendrakumar Jain. This book was released on 2016. Nickel Silicide Contact for Copper Plated Silicon Solar Cells available in PDF, EPUB and Kindle. Nickel-Copper metallization for silicon solar cells offers a cost effective alternative to traditional screen printed silver paste technology. The main objective of this work is to study the formation of nickel silicide contacts with and without native silicon dioxide SiO2.The effect of native SiO2 on the silicide formation has been studied using Ramanspectroscopy, Rutherford backscattering spectrometry and sheet resistancemeasurements which shows that SiO2 acts as a diffusion barrier for silicidation at low temperatures of 350°C. At 400°C the presence of SiO2 results in the increased formation of nickel mono-silicide phase with reduced thickness when compared to samples withoutany native oxide. Pre and post-anneal measurements of Suns Voc, photoluminescence and Illuminated lock in thermography show effect of annealing on electrical characteristics of the device. The presence of native oxide is found to prevent degradation of the solar cells when compared to cells without any native oxide. A process flow for fabricating siliconsolar cells using light induced plating of nickel and copper with and without native oxide(SiO2) has been developed and cell results for devices fabricated on 156mm wafers have been discussed.
Chemical Vapor Deposition
Chemical Vapor Deposition - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Chemical Vapor Deposition write by Jong-Hee Park. This book was released on 2001. Chemical Vapor Deposition available in PDF, EPUB and Kindle.
Nickel Silicide as a Contact and Diffusion Barrier for Copper Metallization in Silicon Photovoltaics
Nickel Silicide as a Contact and Diffusion Barrier for Copper Metallization in Silicon Photovoltaics - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Nickel Silicide as a Contact and Diffusion Barrier for Copper Metallization in Silicon Photovoltaics write by Alexander Angus Marshall. This book was released on 2017. Nickel Silicide as a Contact and Diffusion Barrier for Copper Metallization in Silicon Photovoltaics available in PDF, EPUB and Kindle. "In this study, NiSi has been formed as the contact for copper front metallization on laboratory silicon solar cells. Transfer length method (TLM) measurements were used to examine the resistive nature of the contact. The scalability of the measurement itself was also examined. Characterization of the NiSi films for thickness, resistivity and composition were performed. Single crystal silicon solar cells were fabricated and used in temperature stress tests of the degradation of the pseudo-fill factor (pFF) and quantum efficiency (QE) to assess the capabilities of the NiSi diffusion barrier. Best contact resistivities of 7.3e-6 Ohm-cm2 with NiSi only and 4.0e-5 Ohm-cm2 with NiSi/Cu/TiN were measured. Even following a week of temperature stress, NiSi maintained solar cell performance parameters such as pseudo fill factor (pFF) and quantum efficiency (QE) better than Cu/TiN contacts without NiSi and at least as good as Ti/Pd/Ag contacts on average. These methods and materials were applied to high efficiency, textured, solar cells with passivated tunneling contacts. The viability of NiSi in this regime was evaluated by photoluminescence (PL), optical, and TLM measurements. Although the NiSi contact was shown to damage the passivation quality of the contact, a cell capable of an open circuit voltage near 700 mV could be produced using such a contact scheme. Contact resistances as low as 1.8 mOhm-cm2 were formed, as compared with industry standard screen printed Ag contacts which form best contact resistivities in the range of 1.5 mOhm-cm2."--Abstract.
Advancing Silicon Carbide Electronics Technology I
Advancing Silicon Carbide Electronics Technology I - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Advancing Silicon Carbide Electronics Technology I write by Konstantinos Zekentes. This book was released on 2018-09-25. Advancing Silicon Carbide Electronics Technology I available in PDF, EPUB and Kindle. The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
