Characterization of Semi-Insulating Gallium Arsenide - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Characterization of Semi-Insulating Gallium Arsenide write by . This book was released on 1993. Characterization of Semi-Insulating Gallium Arsenide available in PDF, EPUB and Kindle. The project was established 11-18-92 to continue for 12 months. Its purpose has been electrical and optical characterization of samples from semi-insulating (SI) melt-grown crystals of gallium arsenide (GaAs). As a further definition of the project's purpose, the primary goal has been to assist NRL in assessing the properties of SI GaAs crystals grown at NRL, by the vertical zone melt (VZM) method. A second aspect of this characterization work has involved samples from SI GaAs crystals grown by various commercial vendors, including samples of pre-synthesized GaAs evaluated for its suitability as starting 'feedstock' for VZM growth. Measurements made at Western Washington University (WWU) under the terms of this project accord with a Statement of Work provided at the outset. These have included (a) low-field dc electrical transport data for SI GaAs samples, as functions of temperature; (b) near-infrared (NIR) transmittance/absorption spectra of polished slabs, with data concerning the well-known EL2 defect determined from NIR absorption strength and spectral form; (c) mid-IR data on absorption caused by carbon acceptors in SI GaAs.
Optical Characterization for Semi-insulating Gallium Arsenide [microform]
Optical Characterization for Semi-insulating Gallium Arsenide [microform] - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Optical Characterization for Semi-insulating Gallium Arsenide [microform] write by Yu Zhang. This book was released on 1991. Optical Characterization for Semi-insulating Gallium Arsenide [microform] available in PDF, EPUB and Kindle.
Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide
Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide write by R. L. Ross. This book was released on 1981. Growth and Characterization of Bulk, Semi-Insulating Gallium Arsenide available in PDF, EPUB and Kindle. The physical and electrical properties of GaAs show it to be an important semiconductor material for use in various electronic devices associated with advanced military systems. However, the realization of enhanced device performance has been delayed, partly due to the lack of consistent, high quality, semi-insulating GaAs substrate material. A modified liquid-encapsulated Czochralski technique employing pressure-assisted, in-situ compounding is described. This process, first demonstrated in the United States by the US Army Electronics Technology and Devices Laboratory, consistently yields high resistivity (to 10 to the 9th power ohm-cm) GaAs without the intentional addition of charge compensators. This approach is now becoming the basis for U.S. volume production of large diameter, high quality, semi-insulating GaAs material. An automated system for the measurement of transport properties by use of the van der Pauw method is described. A mixed conduction analysis allows the direct determination of individual carrier concentrations and mobilities, intrinsic carrier concentration and Fermi level. Applied to ET & DL's non-Cr-doped GaAs, this analysis yields electron mobilities higher than Cr-doped material and Fermi levels which are nearly intrinsic. (Author).
Development of Cathodoluminescence as a Characterization Technique for Semi-insulating Gallium Arsenide
Development of Cathodoluminescence as a Characterization Technique for Semi-insulating Gallium Arsenide - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Development of Cathodoluminescence as a Characterization Technique for Semi-insulating Gallium Arsenide write by Arthur Leroy Keigler. This book was released on 1983. Development of Cathodoluminescence as a Characterization Technique for Semi-insulating Gallium Arsenide available in PDF, EPUB and Kindle.
Development of Deep-level Photo-thermal Spectroscopy and Photo-Carrier Radiometry for the Characterization of Semi-insulating Gallium Arsenide (SI-GaAs).
Development of Deep-level Photo-thermal Spectroscopy and Photo-Carrier Radiometry for the Characterization of Semi-insulating Gallium Arsenide (SI-GaAs). - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Development of Deep-level Photo-thermal Spectroscopy and Photo-Carrier Radiometry for the Characterization of Semi-insulating Gallium Arsenide (SI-GaAs). write by Jun Xia. This book was released on 2010. Development of Deep-level Photo-thermal Spectroscopy and Photo-Carrier Radiometry for the Characterization of Semi-insulating Gallium Arsenide (SI-GaAs). available in PDF, EPUB and Kindle. Semi-insulating gallium arsenide (SI-GaAs) has gained great interest in recent years due to its wide application in optoelectronic devices and high-speed integrated circuits. An important feature of SI-GaAs is the high density of deep-level defect states, which control the electrical properties of the substrate by compensating the shallow defects. Over the years, deep-level transient spectroscopy (DLTS) and its variations have been the most effective tools employed for the characterization of deep-level defects. However, most of these techniques require a contact probe and tend to be quite restrictive in their applications' scope. In this thesis deep-level photo-thermal spectroscopy (DLPTS), an all-optical rate-window-based technique, is presented as a novel noncontact technique for the characterization of deep-level defects in SI-GaAs. The signal-generation mechanism for DLPTS is the super-bandgap excitation of carriers, and the sub-bandgap detection of the defect's thermal-emission process. Combined with the rate-window detection utilizing lock-in amplifiers, DLPTS measurements are performed in three different modalities: temperature-scan, pulse-rate scan, and time-scan. This work demonstrates that each mode provides unique information about the defect configuration, and, in combination, the modes offer a powerful tool for the study of defect properties and optoelectronic processes in SI-GaAs. A hierarchical carrier-emission theory is proposed to explain the thermal broadening (nonexponentiality) in photo-thermal spectra. The model is studied comparatively with the Gaussian distribution of activation energies, and their similarities demonstrate an ergodic equivalence of random energy distribution and the constrained hierarchical emission process. In addition, a rate-window gated photo-carrier radiometry (PCR) technique is developed. The original diffusion-based PCR theory is modified to reflect the signal domination by trap emission and capture rates in the absence of diffusion. Defect luminescence is collected and analyzed using photo-thermal temperature spectra and resonant detection combined with frequency scans. The study results in the identification of five radiative defect states and the defect-photoluminescence quantum efficiency.
