Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy write by Jen-Wu Huang. This book was released on 1996. Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy available in PDF, EPUB and Kindle.
Oxygen-doped III-V Semiconductors Grown by Metal Organic Vapor Phase Epitaxy
Oxygen-doped III-V Semiconductors Grown by Metal Organic Vapor Phase Epitaxy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Oxygen-doped III-V Semiconductors Grown by Metal Organic Vapor Phase Epitaxy write by James Michael Ryan. This book was released on 2004. Oxygen-doped III-V Semiconductors Grown by Metal Organic Vapor Phase Epitaxy available in PDF, EPUB and Kindle.
Metalorganic Vapor Phase Epitaxy (MOVPE)
Metalorganic Vapor Phase Epitaxy (MOVPE) - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Metalorganic Vapor Phase Epitaxy (MOVPE) write by Stuart Irvine. This book was released on 2019-10-07. Metalorganic Vapor Phase Epitaxy (MOVPE) available in PDF, EPUB and Kindle. Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Organometallic Vapor-Phase Epitaxy
Organometallic Vapor-Phase Epitaxy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Organometallic Vapor-Phase Epitaxy write by Gerald B. Stringfellow. This book was released on 2012-12-02. Organometallic Vapor-Phase Epitaxy available in PDF, EPUB and Kindle. Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition
Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition write by Steven P. DenBaars. This book was released on 1988. Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition available in PDF, EPUB and Kindle. Atomic Layer Epitaxy (ALE) is a promising variation of conventional vapor phase epitaxy which achieves uniform growth of ultra-thin epitaxial layers by a self-limiting monolayer by monolayer deposition process. By developing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is deposited in every cycle of the deposition. In this thesis, ALE growth of single crystal GaAs, as well as AlAs and GaAs/AlGaAs heterostructures and devices is demonstrated. We have been able to grow extremely uniform ultra-thin epitaxial layers and quantum wells (QWs) with thickness variations of less than one monolayer per cm over an entire sample in an optimized reactor using ALE. The observed dependence of the growth rate on temperature and trimethylgallium flux is modeled by first order adsorption kinetics utilizing measured reaction rate constants. The low temperature photoluminescence (PL) of ALE grown GaAs QW's exhibit narrow line intrinsic luminescence with linewidths comparable to the best reported values by conventional MOCVD. (jhd).
