Design of RF CMOS Front-End for Ultra-Wideband Wireless Receiver - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Design of RF CMOS Front-End for Ultra-Wideband Wireless Receiver write by 黃哲揚. This book was released on 2006. Design of RF CMOS Front-End for Ultra-Wideband Wireless Receiver available in PDF, EPUB and Kindle.
Silicon-Based RF Front-Ends for Ultra Wideband Radios
Silicon-Based RF Front-Ends for Ultra Wideband Radios - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Silicon-Based RF Front-Ends for Ultra Wideband Radios write by Aminghasem Safarian. This book was released on 2007-12-28. Silicon-Based RF Front-Ends for Ultra Wideband Radios available in PDF, EPUB and Kindle. A comprehensive study of silicon-based distributed architectures in wideband circuits are presented in this book. Novel circuit architectures for ultra-wideband (UWB) wireless technologies are described. The book begins with an introduction of several transceiver architectures for UWB. The discussion then focuses on RF front-end of the UWB radio. Therefore, the book will be of interest to RF circuit designers and students.
Development of RF CMOS Receiver Front-ends for Ultra-wideband Communications
Development of RF CMOS Receiver Front-ends for Ultra-wideband Communications - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Development of RF CMOS Receiver Front-ends for Ultra-wideband Communications write by Xin Guan. This book was released on 2010. Development of RF CMOS Receiver Front-ends for Ultra-wideband Communications available in PDF, EPUB and Kindle. Ultra-Wideband (UWB) technology has become one of the hottest topics in wireless communications, for it provides cost-effective, power-efficient, high bandwidth solution for relaying data in the immediate area (up to 10 meters). This work demonstrates two different solutions for the RF front-end designs in the UWB receivers, one is distributed topology, and the other is based on traditional lumped element topology. The distributed amplifier is one of the attractive candidates for UWB Low Noise Amplifier (LNA). The design, analysis and operation of the distributed amplifiers will be presented. A distributed amplifier is designed with Coplanar Waveguide (CPW) transmission lines in 0.25-[micron] CMOS process for time domain UWB applications. New design techniques and new topologies are developed to enhance the power-efficiency and reduce the chip area. A compact and high performance distributed amplifier with Patterned Grounded Shield (PGS) inductors is developed in 0.25-[micron] CMOS process. The amplifier has a measurement result of 7.2dB gain, 4.2-6dB noise figure, and less than -10dB return loss through 0-11GHz. A new distributed amplifier implementing cascade common source gain cells is presented in 0.18-[micron] CMOS. The new amplifier demonstrates a high gain of 16dB at a power consumption of 100mW, and a gain of 10dB at a low power consumption of 19mW. A UWB LNA utilizing resistive shunt feedback technique is reported in 0.18-[micron] CMOS process. The measurement results of the UWB LNA demonstrate a maximum gain of 10.5dB and a noise figure of 3.3-4.5dB from 3-9.5GHz, while only consuming 9mW power. Based on the distributed amplifier and resistive shunt-feedback amplifier designs, two UWB RF front-ends are developed. One is a distributed LNA-Mixer. Unlike the conventional distributed mixer, which can only deliver low gain and high noise figure, the proposed distributed LNA-Mixer demonstrates 12-14dB gain,4-5dB noise figure and higher than 10dB return loss at RF and LO ports over 2-16GHz. To overcome the power consumption and chip area problems encountered in distributed circuits, another UWB RF front-end is also designed with lumped elements. This front-end, employing resistive shunt-feedback technique into its LNA design, can achieve a gain of 12dB and noise figure of 8-10dB through 3-10GHz, the return loss of less than -10dB from 3- 10GHz at RF port, and less than -7dB at LO port, while only consuming 25mA current from 1.8V voltage supply.
Design of CMOS RFIC Ultra-Wideband Impulse Transmitters and Receivers
Design of CMOS RFIC Ultra-Wideband Impulse Transmitters and Receivers - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Design of CMOS RFIC Ultra-Wideband Impulse Transmitters and Receivers write by Cam Nguyen. This book was released on 2017-03-21. Design of CMOS RFIC Ultra-Wideband Impulse Transmitters and Receivers available in PDF, EPUB and Kindle. This book presents the design of ultra-wideband (UWB) impulse-based transmitter and receiver frontends, operating within the 3.1-10.6 GHz frequency band, using CMOS radio-frequency integrated-circuits (RFICs). CMOS RFICs are small, cheap, low power devices, better suited for direct integration with digital ICs as compared to those using III-V compound semiconductor devices. CMOS RFICs are thus very attractive for RF systems and, in fact, the principal choice for commercial wireless markets. The book comprises seven chapters. The first chapter gives an introduction to UWB technology and outlines its suitability for high resolution sensing and high-rate, short-range ad-hoc networking and communications. The second chapter provides the basics of CMOS RFICs needed for the design of the UWB RFIC transmitter and receiver presented in this book. It includes the design fundamentals, lumped and distributed elements for RFIC, layout, post-layout simulation, and measurement. The third chapter discusses the basics of UWB systems including UWB advantages and applications, signals, basic modulations, transmitter and receiver frontends, and antennas. The fourth chapter addresses the design of UWB transmitters including an overview of basic components, design of pulse generator, BPSK modulator design, and design of a UWB tunable transmitter. Chapter 5 presents the design of UWB receivers including the design of UWB low-noise amplifiers, correlators, and a UWB 1 receiver. Chapter 6 covers the design of a UWB uniplanar antenna. Finally, a summary and conclusion is given in Chapter 7.
Design of a 3.1-4.8 GHZ RF Front-end for an Ultra Wideband Receiver
Design of a 3.1-4.8 GHZ RF Front-end for an Ultra Wideband Receiver - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Design of a 3.1-4.8 GHZ RF Front-end for an Ultra Wideband Receiver write by Pushkar Sharma. This book was released on 2006. Design of a 3.1-4.8 GHZ RF Front-end for an Ultra Wideband Receiver available in PDF, EPUB and Kindle. IEEE 802.15 High Rate Alternative PHY task group (TG3a) is working to define a protocol for Wireless Personal Area Networks (WPANs) which makes it possible to attain data rates of greater than 110Mbps. Ultra Wideband (UWB) technology utilizing frequency band of 3.168 GHz - 10.6 GHz is an emerging solution to this with data rates of 110, 200 and 480 Mbps. Initially, UWB mode I devices using only 3.168 GHz - 4.752GHz have been proposed. Low Noise Amplifier (LNA) and I-Q mixers are key components constituting the RF front-end. Performance of these blocks is very critical to the overall performance of the receiver. In general, main considerations for the LNA are low noise, 50 broadband input matching, high gain with maximum flatness and good linearity. For the mixers, it is essential to attain low flicker noise performance coupled with good conversion gain. Proposed LNA architecture is a derivative of inductive source degenerated topology. Broadband matching at the LNA output is achieved using LC band-pass filter. To obtain high gain with maximum flatness, an LC band-pass filter is used at its output. Proposed LNA achieved a gain of 15dB, noise figure of less than 2.6dB and IIP3 of more than-7dBm. Mixer is a modified version of double balanced Gilbert cell topology where both I and Q channel mixers are merged together. Frequency response of each sub-band is matched by using an additional inductor, which further improves the noise figure and conversion gain. Current bleeding scheme is used to further reduce the low frequency noise. Mixer achieves average conversion gain of 14.5dB, IIP3 more than 6dBm and Double Side Band (DSB) noise figure less than 9dB. Maximum variation in conversion gain is desired to be less than 1dB. Both LNA and mixers are designed to be fabricated in TSMC 0.18 [mu]m CMOS technology.
