Epitaxy of Crystalline Oxides for Functional Materials Integration on Silicon

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Release : 2010
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Epitaxy of Crystalline Oxides for Functional Materials Integration on Silicon - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Epitaxy of Crystalline Oxides for Functional Materials Integration on Silicon write by Gang Niu. This book was released on 2010. Epitaxy of Crystalline Oxides for Functional Materials Integration on Silicon available in PDF, EPUB and Kindle. Oxides form a class of material which covers almost all the spectra of functionalities : dielectricity, semiconductivity, metallicity superconductivity, non-linear optics, acoustics, piezoelectricity, ferroelectricity, ferromagnetism...In this thesis, crystalline oxides have beenintegrated on the workhorse of the semiconductor industry, the silicon, by Molecular Beam Epitaxy (MBE).The first great interest of the epitaxial growth of crystalline oxides on silicon consists in the application of "high-k" dielectric for future sub-22nm CMOS technology. Gadoliniumoxide was explored in detail as a promising candidate of the alternative of SiO2. The pseudomorphic epitaxial growth of Gd2O3 on Si (111) was realized by identifying the optimal growth conditions. The Gd2O3 films show good dielectric properties and particularly an EOTof 0.73nm with a leakage current consistent with the requirements of ITRS for the sub-22nmnodes. In addition, the dielectric behavior of Gd2O3 thin films was further improved by performing PDA treatments. The second research interest on crystalline oxide/Si platform results from its potential application for the "More than Moore" and "Heterogeneous integration" technologies. TheSrTiO3/Si (001) was intensively studied as a paradigm of the integration of oxides on semiconductors. The crystallinity, interface and surface qualities and relaxation process of the STO films on silicon grown at the optimal conditions were investigated and analyzed. Several optimized growth processes were carried out and compared. Finally a "substrate-like" STO thin film was obtained on the silicon substrate with good crystallinity and atomic flat surface. Based on the Gd2O3/Si and SrTiO3/Si templates, diverse functionalities were integrated on the silicon substrate, such as ferro-(piezo-)electricity (BaTiO3, PZT and PMN-PT),ferromagnetism (LSMO) and optoelectronics (Ge). These functional materials epitaxially grown on Si can be widely used for storage memories, lasers and solar cells, etc.

Integration of Functional Oxides with Semiconductors

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Release : 2014-02-20
Genre : Technology & Engineering
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Book Rating : 20X/5 ( reviews)

Integration of Functional Oxides with Semiconductors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Integration of Functional Oxides with Semiconductors write by Alexander A. Demkov. This book was released on 2014-02-20. Integration of Functional Oxides with Semiconductors available in PDF, EPUB and Kindle. This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.

Molecular Beam Epitaxy

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Release : 2018-06-27
Genre : Science
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Book Rating : 378/5 ( reviews)

Molecular Beam Epitaxy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Molecular Beam Epitaxy write by Mohamed Henini. This book was released on 2018-06-27. Molecular Beam Epitaxy available in PDF, EPUB and Kindle. Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Atomic Layer Deposition Applications 6

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Release : 2010-10
Genre : Science
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Book Rating : 212/5 ( reviews)

Atomic Layer Deposition Applications 6 - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Atomic Layer Deposition Applications 6 write by J. W. Elam. This book was released on 2010-10. Atomic Layer Deposition Applications 6 available in PDF, EPUB and Kindle. The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the focus of this reoccurring symposium. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topographies with controlled thickness and composition. This issue of ECS Transactions contains peer reviewed papers presented at the symposium. A broad spectrum of ALD applications is featured, including novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics, and a variety of other emerging applications.

Monolithic Integration of Crystalline Oxides on Silicon and Germanium Using Atomic Layer Deposition

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Release : 2015
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Monolithic Integration of Crystalline Oxides on Silicon and Germanium Using Atomic Layer Deposition - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Monolithic Integration of Crystalline Oxides on Silicon and Germanium Using Atomic Layer Deposition write by Martin Douglas McDaniel. This book was released on 2015. Monolithic Integration of Crystalline Oxides on Silicon and Germanium Using Atomic Layer Deposition available in PDF, EPUB and Kindle. Inside your microelectronic devices there are up to a billion transistors working in flawless operation. Silicon has been the workhorse semiconductor used for the transistor; however, there must be a transition to materials other than silicon, such as germanium, with future device sizes. In addition, new dielectric oxide materials are needed. My research has examined a type of crystalline oxide, known as a perovskite, which is selected for its ability to bond chemically to Si and Ge, and eliminate the electrical defects that affect performance. Many perovskite oxides are lattice-matched to the Si (001) and Ge (001) surface spacing, enabling heteroepitaxy. To date, the majority of research on crystalline oxides integrated with semiconductors has been based on strontium titanate, SrTiO3, epitaxially grown on Si (001) by molecular beam epitaxy. Alternative low-temperature growth methods, such as atomic layer deposition (ALD), offer both practical and economic benefits for the integration of crystalline oxides on semiconductors. My initial research informed the broader community that four unit cells (~1.5 nm) of SrTiO3 are required to enable heteroepitaxy on Si. The research has also shown that heteroepitaxial layers can be monolithically integrated with Si (001) without the formation of a SiOx interlayer between the Si (001) surface and the SrTiO3 layer because ALD is performed at lower temperatures than are typical for MBE. Thus, a combined MBE-ALD growth technique creates possible advantages in device designs that require the crystalline oxide to be in contact with the Si (001) surface. In recent work, I have demonstrated a method for integrating crystalline oxides directly on Ge by ALD. Germanium is being explored as an alternative channel material due to its higher hole and electron mobilities than Si, potentially enabling device operation at higher speed. This all-chemical growth process is expected to be scalable, is inherently less costly from a manufacturing cost of ownership, and is based on current manufacturing tool infrastructure. The impact of my research will be in continued scaling of device dimensions with novel materials that will provide faster speed and lower power consumption for microelectronic devices.