Fabrication of Submicron Self-aligned Regrown Emitter Heterojunction Bipolar Transistors

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Release : 1997
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Fabrication of Submicron Self-aligned Regrown Emitter Heterojunction Bipolar Transistors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Fabrication of Submicron Self-aligned Regrown Emitter Heterojunction Bipolar Transistors write by Sang Hoon Park. This book was released on 1997. Fabrication of Submicron Self-aligned Regrown Emitter Heterojunction Bipolar Transistors available in PDF, EPUB and Kindle.

Self-aligned Sub-micron Germanium-silicon/silicon Heterojunction Bipolar Transistors

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Release : 1993
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Self-aligned Sub-micron Germanium-silicon/silicon Heterojunction Bipolar Transistors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Self-aligned Sub-micron Germanium-silicon/silicon Heterojunction Bipolar Transistors write by Weihua Liu. This book was released on 1993. Self-aligned Sub-micron Germanium-silicon/silicon Heterojunction Bipolar Transistors available in PDF, EPUB and Kindle.

Ultra-Fast Silicon Bipolar Technology

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Release : 2013-03-13
Genre : Technology & Engineering
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Book Rating : 609/5 ( reviews)

Ultra-Fast Silicon Bipolar Technology - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Ultra-Fast Silicon Bipolar Technology write by Ludwig Treitinger. This book was released on 2013-03-13. Ultra-Fast Silicon Bipolar Technology available in PDF, EPUB and Kindle. Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.

Design and Realization of Bipolar Transistors

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Release : 1988-08-18
Genre : Technology & Engineering
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Design and Realization of Bipolar Transistors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Design and Realization of Bipolar Transistors write by Peter Ashburn. This book was released on 1988-08-18. Design and Realization of Bipolar Transistors available in PDF, EPUB and Kindle. Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.

Current Trends in Heterojunction Bipolar Transistors

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Release : 1996
Genre : Technology & Engineering
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Book Rating : 976/5 ( reviews)

Current Trends in Heterojunction Bipolar Transistors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Current Trends in Heterojunction Bipolar Transistors write by M. F. Chang. This book was released on 1996. Current Trends in Heterojunction Bipolar Transistors available in PDF, EPUB and Kindle. Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.