GaN and Related Alloys: Volume 537 - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook GaN and Related Alloys: Volume 537 write by S. J. Pearton. This book was released on 1999-09-14. GaN and Related Alloys: Volume 537 available in PDF, EPUB and Kindle. This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
GaN-based Materials and Devices
GaN-based Materials and Devices - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook GaN-based Materials and Devices write by Michael Shur. This book was released on 2004. GaN-based Materials and Devices available in PDF, EPUB and Kindle. The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
GaN and Related Alloys
GaN and Related Alloys - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook GaN and Related Alloys write by . This book was released on 2004. GaN and Related Alloys available in PDF, EPUB and Kindle.
GaN and Related Alloys - 1999: Volume 595
GaN and Related Alloys - 1999: Volume 595 - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook GaN and Related Alloys - 1999: Volume 595 write by Thomas H. Myers. This book was released on 2000-05-05. GaN and Related Alloys - 1999: Volume 595 available in PDF, EPUB and Kindle. This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
GaN and Related Alloys, MRS Symposium Proceedings Held in Boston, Massachusetts on 30 November-4 December 1998. Volume 537
GaN and Related Alloys, MRS Symposium Proceedings Held in Boston, Massachusetts on 30 November-4 December 1998. Volume 537 - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook GaN and Related Alloys, MRS Symposium Proceedings Held in Boston, Massachusetts on 30 November-4 December 1998. Volume 537 write by . This book was released on 1998. GaN and Related Alloys, MRS Symposium Proceedings Held in Boston, Massachusetts on 30 November-4 December 1998. Volume 537 available in PDF, EPUB and Kindle. This proceedings volume is the permanent record of the Materials Research Society symposium entitled "GaN and Related Alloys," held November 30-December 4, 1998, at the MRS Fall Meeting in Boston, Massachusetts. The symposium covered the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high- density information storage, white lighting for indoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and for covert undersea communications. The symposium contained a plenary session with talks on laser diodes, electronic devices, substrates, etching, contacts, and piezoelectric and pyroelectric properties. This was followed by sessions on laser diodes and spectroscopy; conventional growth and characterization; epitaxial lateral overgrowth and selective growth; theory, defects, transport, and bandstructure; surfaces, theory, and processing; LEDs, UV detectors, and optical properties; electronic devices and processing; quantum dots; novel growth, doping, and processing; and finally, rare-earth doping and optical emission.
