Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance write by Robert F Davis. This book was released on 2004-05-07. Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance available in PDF, EPUB and Kindle. The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
GaN-based Materials and Devices
GaN-based Materials and Devices - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook GaN-based Materials and Devices write by Michael Shur. This book was released on 2004. GaN-based Materials and Devices available in PDF, EPUB and Kindle. The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
GaN and ZnO-based Materials and Devices
GaN and ZnO-based Materials and Devices - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook GaN and ZnO-based Materials and Devices write by Stephen Pearton. This book was released on 2012-01-14. GaN and ZnO-based Materials and Devices available in PDF, EPUB and Kindle. The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Handbook of GaN Semiconductor Materials and Devices
Handbook of GaN Semiconductor Materials and Devices - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Handbook of GaN Semiconductor Materials and Devices write by Wengang (Wayne) Bi. This book was released on 2017-10-20. Handbook of GaN Semiconductor Materials and Devices available in PDF, EPUB and Kindle. This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Power GaN Devices
Power GaN Devices - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Power GaN Devices write by Matteo Meneghini. This book was released on 2016-09-08. Power GaN Devices available in PDF, EPUB and Kindle. This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
