High-precision Reflectometry of Multilayer Coatings for Extreme Ultraviolet Lithography - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook High-precision Reflectometry of Multilayer Coatings for Extreme Ultraviolet Lithography write by . This book was released on 1999. High-precision Reflectometry of Multilayer Coatings for Extreme Ultraviolet Lithography available in PDF, EPUB and Kindle. Synchrotron-based reflectometry is an important technique for the precise determination of optical properties of reflective multilayer coatings for Extreme Ultraviolet Lithography (EUVL). Multilayer coatings enable normal incidence reflectances of more than 65% in the wavelength range between 11 and 15 nm. In order to achieve high resolution and throughput of EUVL systems, stringent requirements not only apply to their mechanical and optical layout, but also apply to the optical properties of the multilayer coatings. Therefore, multilayer deposition on near-normal incidence optical surfaces of projection optics, condenser optics and reflective masks requires suitable high-precision metrology. Most important, due to their small bandpass on the order of only 0.5 nm, all reflective multilayer coatings in EUVL systems must be wavelength-matched to within "0.05 nm. In some cases, a gradient of the coating thickness is necessary for wavelength matching at variable average angle of incidence in different locations on the optical surfaces. Furthermore, in order to preserve the geometrical figure of the optical substrates, reflective multilayer coatings need to be uniform to within 0.01 nm in their center wavelength. This requirement can only be fulfilled with suitable metrology, which provides a precision of a fraction of this value. In addition, for the detailed understanding and the further development of reflective multilayer coatings a precision in the determination of peak reflectances is desirable on the order of 0.1%. Substrates up to 200 mm in diameter and 15 kg in mass need to be accommodated. Above requirements are fulfilled at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley. This beamline proved to be precise within 0.2% (ms) for reflectance and 0.002 nm (rms) for wavelength.
Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography
Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography write by . This book was released on 1999. Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography available in PDF, EPUB and Kindle. The synchrotron-based reflectometer at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley is an important metrology tool within the current Extreme Ultraviolet Lithography (EUVL) program. This program is a joint activity of three National Laboratories and a consortium of leading semiconductor manufacturers. Its goal is the development of a technology for routine production of sub-100 nm feature sizes for microelectronic circuits. Multilayer-coated normal-incidence optical surfaces reflecting in the Extreme Ultraviolet (EUV) spectral range near 13 nm are the basis for this emerging technology. All optical components of EUV lithographic steppers need to be characterized at-wavelength during their development and manufacturing process. Multilayer coating uniformity and gradient, accurate wavelength matching and high peak reflectances are the main parameters to be optimized. The mechanical and optical properties of the reflectometer at ALS beamline 6.3.2 proved to be well suited for the needs of the current EUVL program. In particular the facility is highly precise in its wavelength calibration and the determination of absolute EUV reflectance. The reproducibility of results of measurements at ALS beamline 6.3.2 is 0.2 % for reflectivity and 0.002 nm for wavelength.
Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography
Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography write by . This book was released on . Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography available in PDF, EPUB and Kindle.
Experimental Investigation of Beryllium-based Multilayer Coatings for Extreme Ultraviolet Lithography
Experimental Investigation of Beryllium-based Multilayer Coatings for Extreme Ultraviolet Lithography - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Experimental Investigation of Beryllium-based Multilayer Coatings for Extreme Ultraviolet Lithography write by . This book was released on 1999. Experimental Investigation of Beryllium-based Multilayer Coatings for Extreme Ultraviolet Lithography available in PDF, EPUB and Kindle. The performance of beryllium-based multilayer coatings designed to reflect light of wavelengths near 11 nm, at normal incidence, is presented. These multilayer coatings are of special interest for extreme ultraviolet lithography (EUVL). The beryllium-based multilayers investigated were Mo/Be, Ru/Be and a new material combination Mo, CiBe. The highest reflectivity achieved so far is 70% at 11.3 mn with 70 bilayers of Mo/Be. However, even though high reflectivity is very important, there are other parameters to satisfy the requirements for an EUVL production tool. Multilayer stress, thermal stability, radiation stability and long term reflectance stability are of equal or greater importance. An experimental characterization of several coatings was carried out to determine the reflectivity, stress, microstructure, and long term stability of these coatings. Theoretically calculated reflectivities are compared with experimental results for different material pairs; differences between experimental and theoretical reflectivities and bandwidths are addressed. Keywords: Extreme ultraviolet (EUV) lithography, reflective coatings, multilayer deposition, beryllium.
EUV Sources for Lithography
EUV Sources for Lithography - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook EUV Sources for Lithography write by Vivek Bakshi. This book was released on 2006. EUV Sources for Lithography available in PDF, EPUB and Kindle. This comprehensive volume, edited by a senior technical staff member at SEMATECH, is the authoritative reference book on EUV source technology. The volume contains 38 chapters contributed by leading researchers and suppliers in the EUV source field. Topics range from a state-of-the-art overview and in-depth explanation of EUV source requirements, to fundamental atomic data and theoretical models of EUV sources based on discharge-produced plasmas (DPP) and laser-produced plasmas, to a description of prominent DPP and LPP designs and other technologies for producing EUV radiation. Additional topics include EUV source metrology and components (collectors, electrodes), debris mitigation, and mechanisms of component erosion in EUV sources. The volume is intended to meet the needs of both practitioners of the technology and readers seeking an introduction to the subject.
