Author : Farah P. Vandrevala
Release : 2013
Genre :
Kind :
Book Rating : /5 ( reviews)

GET EBOOK

Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region write by Farah P. Vandrevala. This book was released on 2013. Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region available in PDF, EPUB and Kindle. The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.