Modeling and simulation of high field carrier transport in semiconductors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Modeling and simulation of high field carrier transport in semiconductors write by Chandramouli Venkataramani. This book was released on 1994. Modeling and simulation of high field carrier transport in semiconductors available in PDF, EPUB and Kindle.
Modelling of Interface Carrier Transport for Device Simulation
Modelling of Interface Carrier Transport for Device Simulation - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Modelling of Interface Carrier Transport for Device Simulation write by Dietmar Schroeder. This book was released on 2013-03-09. Modelling of Interface Carrier Transport for Device Simulation available in PDF, EPUB and Kindle. This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Topics in High Field Transport in Semiconductors
Topics in High Field Transport in Semiconductors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Topics in High Field Transport in Semiconductors write by Kevin F. Brennan. This book was released on 2001. Topics in High Field Transport in Semiconductors available in PDF, EPUB and Kindle. This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field. Contents: Foreword (K F Brennan & P P Ruden); Quantum Transport in Semiconductor Devices (D K Ferry et al.); Quantum Transport and Its Simulation with the Wigner-Function Approach (C Jacoboni et al.); Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields (J P Reynolds et al.); Collision Broadening Through Sequences of Scattering Events: Theory, Consequences and Modeling Within Semiclassical Monte Carlo (L F Register & B Fisher); Transport in a Polarization-Induced 2D Electron Gas (B K Ridley & N A Zakhleniuk); Impact Ionization and High Field Effects in Wide Band Gap Semiconductors (M Reigrotzki et al.); Simulation of Carrier Transport in Wide Band Gap Semiconductors (E Bellotti et al.); Electrical Transport in Organic Semiconductors (I H Campbell & D L Smith). Readership: Researchers and graduate students in the field of semiconductors.
Introduction to Semiconductor Device Modelling
Introduction to Semiconductor Device Modelling - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Introduction to Semiconductor Device Modelling write by Christopher M. Snowden. This book was released on 1998. Introduction to Semiconductor Device Modelling available in PDF, EPUB and Kindle. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
First-principle Theory of High Field Carrier Transport in Semiconductors with Application to the Study of Avalanche Photodiodes
First-principle Theory of High Field Carrier Transport in Semiconductors with Application to the Study of Avalanche Photodiodes - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook First-principle Theory of High Field Carrier Transport in Semiconductors with Application to the Study of Avalanche Photodiodes write by Michele Moresco. This book was released on 2011. First-principle Theory of High Field Carrier Transport in Semiconductors with Application to the Study of Avalanche Photodiodes available in PDF, EPUB and Kindle. Abstract: The objective of this thesis work is twofold: to present a theoretical framework to study high-field carrier transport in semiconductor materials and to provide a deep understanding of the transport properties of GaN and HgCdTe. The validation of this model is performed by applying it to the study of Avalanche Photodiodes. The model we developed is based on Monte Carlo techniques and it includes the full details of the band structure, derived from the empirical pseudopotential method (EPM), and a numerically calculated impact ionization transition rate based on a wave-vector dependent dielectric function. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion (RPI) approximation using ab initio techniques to determine the phonon dispersion relation. The calculated phonon scattering rates are consistent with the electronic structure and the phonon dispersion relation thus removing adjustable parameters such as deformation potential coefficients. Band-to-band carrier tunneling has been treated by solving the time-dependent multiband Schroedinger equation. The multiband description predicts a considerable increase of the impact ionization coefficients compared with simulations not considering tunneling. Specifically, the present model has been applied to the study of two distinct semiconductor materials: GaN and HgCdTe. The former is a wide bandgap while the second is a narrow bandgap semiconductor. In spite of their constantly increasing technological reliability both materials lack theoretical understanding of high-field carrier transport. Avalanche photodiodes (APDs) offer an ideal environment to test and validate the model developed in this thesis work because of the large electric field involved in these devices. APDs based on both GaN and HgCdTe are investigated, consistently with the physics-based models described above. Key quantities such as gain, breakdown voltage, bandwidth and noise characteristics are estimated. The results are found to be in good agreement with experimental data available in literature.
