Multiscale Modeling in Epitaxial Growth - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Multiscale Modeling in Epitaxial Growth write by Axel Voigt. This book was released on 2006-03-30. Multiscale Modeling in Epitaxial Growth available in PDF, EPUB and Kindle. Epitaxy is relevant for thin film growth and is a very active area of theoretical research since several years. Recently powerful numerical techniques have been used to link atomistic effects at the film's surface to its macroscopic morphology. This book also serves as an introduction into this highly active interdisciplinary field of research for applied mathematicians, theoretical physicists and computational materials scientists.
Modeling of Epitaxial Growth
Modeling of Epitaxial Growth - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Modeling of Epitaxial Growth write by Percy B. Chinoy. This book was released on 1986. Modeling of Epitaxial Growth available in PDF, EPUB and Kindle.
Phase-field Modeling of Thin Film Epitaxial Growth
Phase-field Modeling of Thin Film Epitaxial Growth - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Phase-field Modeling of Thin Film Epitaxial Growth write by Zhengzheng Hu. This book was released on 2008. Phase-field Modeling of Thin Film Epitaxial Growth available in PDF, EPUB and Kindle.
Silicon Epitaxy
Silicon Epitaxy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Silicon Epitaxy write by . This book was released on 2001-09-26. Silicon Epitaxy available in PDF, EPUB and Kindle. Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Modeling and Optimization for Epitaxial Growth: Transport and Growth Studies
Modeling and Optimization for Epitaxial Growth: Transport and Growth Studies - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Modeling and Optimization for Epitaxial Growth: Transport and Growth Studies write by . This book was released on 1999. Modeling and Optimization for Epitaxial Growth: Transport and Growth Studies available in PDF, EPUB and Kindle. This report details the objectives, methodologies, and results for Phase II of the project, "Modeling and Optimization for Epitaxial Growth". This project is a joint effort between the Institute for Systems Research (ISR) and Northrop Grumman Corporation's Electronic Sensors and Systems Sector (ESSS), Baltimore, MD. The overall objective is to improve manufacturing effectiveness for epitaxial growth of silicon and silicon-germanium (Si-Ge) thin films on a silicon wafer. Growth takes place in the ASM Epsilon-1 chemical vapor deposition (CVD) reactor, a production tool currently in use at ESSS. Phase II project results include development of a new comprehensive process-equipment model capable of predicting gas flow, heat transfer, species transport, and chemical mechanisms in the reactor under a variety of process conditions and equipment settings. Applications of the model include prediction and control of deposition rate and thickness uniformity; studying sensitivity of deposition rate to process settings such as temperature, pressure, and flow rates; and reducing the use of consumables via purge flow optimization. The implications of various simulation results are discussed in terms of how they can be used to reduce costs and improve product quality, e.g., thickness uniformity of thin films. We demonstrate that achieving deposition uniformity requires some degree of temperature non-uniformity to compensate for the effects of other phenomena such as reactant depletion, gas heating and gas phase reactions, thermal diffusion of species, and flow patterns.
