Author : ChyiShiun Li
Release : 2002
Genre : Bipolar transistors
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Radiation Effects in III-V Compound Semiconductor Heterostructure Devices - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Radiation Effects in III-V Compound Semiconductor Heterostructure Devices write by ChyiShiun Li. This book was released on 2002. Radiation Effects in III-V Compound Semiconductor Heterostructure Devices available in PDF, EPUB and Kindle. The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs are studied for neutron irradiation effects. A compact model and the parameter extraction procedures for HBTs are developed, and hence the I[subscript C]--V[subscript CE] characteristics of pre- and post-irradiation HBTs can be simulated by employing the developed model. HBTs are electrically characterized before and after proton irradiation. Overall, the studied HBT devices are quite robust against high energy proton irradiation. The most pronounced radiation effect shown in SHBTs is gain degradation. Displacement damage in the bulk of base-emitter space-charge region, leading to excess base current, is the responsible mechanism for the proton-induced gain degradation. The performance degradation depends on the operating current and is generally less at higher currents. Compared to the MBE grown devices, the MOVPE grown HBTs show superior characteristics both in initial performance and in proton irradiation hardness. The 67 MeV protons cause more damage than 105 MeV protons due to their higher value of NIEL (non-ionizing energy loss). The HBT I-V characteristics of pre- and post-irradiated samples can be simulated successfully by employing the developed model. GaN heterojunction LEDs are electrically and optically characterized before and after neutron irradiation. Neutron irradiation causes changes in both the I-V characteristic and the light output. Atomic displacement is responsible for both electrical and optical degradation. Both electrical and optical properties degrade steadily with neutron fluence producing severe degradation after the highest fluence neutron irradiation. The light output degrades by more than 99% after 1.6x1015 n/cm2 neutron irradiation, and the radiation damage depends on the operating current and is generally less at higher currents.