Study of Novel Nano-Scale Junctionless Fin Field-Effect Transistors for 3D-IC Applications - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Study of Novel Nano-Scale Junctionless Fin Field-Effect Transistors for 3D-IC Applications write by 埕雅琪. This book was released on 2016. Study of Novel Nano-Scale Junctionless Fin Field-Effect Transistors for 3D-IC Applications available in PDF, EPUB and Kindle.
Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors
Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors write by . This book was released on 2014. Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors available in PDF, EPUB and Kindle.
Nanoscale Field Effect Transistors: Emerging Applications
Nanoscale Field Effect Transistors: Emerging Applications - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Nanoscale Field Effect Transistors: Emerging Applications write by Ekta Goel, Archana Pandey. This book was released on 2023-12-20. Nanoscale Field Effect Transistors: Emerging Applications available in PDF, EPUB and Kindle. Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Nanowire Field Effect Transistors: Principles and Applications
Nanowire Field Effect Transistors: Principles and Applications - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Nanowire Field Effect Transistors: Principles and Applications write by Dae Mann Kim. This book was released on 2013-10-23. Nanowire Field Effect Transistors: Principles and Applications available in PDF, EPUB and Kindle. “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Nanoscale Effects in Junctionless Field Effect Transistors
Nanoscale Effects in Junctionless Field Effect Transistors - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Nanoscale Effects in Junctionless Field Effect Transistors write by Abdussamad Ahmed Muntahi. This book was released on 2018. Nanoscale Effects in Junctionless Field Effect Transistors available in PDF, EPUB and Kindle. Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using nanowires. This work aims to computationally investigate the interplay of quantum size-quantization and random dopant fluctuations (RDF) effects in nanoscale JLFETs. For this purpose, a 3-D fully atomistic quantum-corrected Monte Carlo device simulator has been integrated and used in this work. The size-quantization effect has been accounted for via a parameter-free effective potential scheme and benchmarked against the NEGF approach in the ballistic limit. To study the RDF effects and treat full Coulomb (electron-ion and electron-electron) interactions in the real-space and beyond the Poisson picture, the simulator implements a corrected-Coulomb electron dynamics (QC-ED) approach. The essential bandstructure and scattering parameters (energy bandgap, effective masses, and the density-of-states) have been computed using an atomistic 20-band nearest-neighbour sp 3d5s* tight-binding scheme. First, an experimental device was simulated to evaluate the validity of the simulator. Because of the small dimension, quantum mechanical confinement was found to be the dominant mechanism that significantly degrades the current drive capability of nanoscale JLFETs. Surface roughness scattering is not as prominent as observed in conventional MOSFETs. Also, because of its small size, the performance of the device is prone to the effect of variability, for which a discrete doping model was proved essential. Finally, a new JLFET was designed and optimized in this work. The proposed device is based on a gate-all-around silicon nanowire. Source/drain length is 32.5 nm and channel length is 14 nm. Gate contact length is 9 nm. The EOT (equivalent oxide thickness) is 1 nm. It has a metal gate with a workfunction of 4.55 eV. The source, channel and drain regions are n-type with a doping density of 1.5×1019 cm-3. Detailed simulation shows that the two most influential mechanisms that degrade the drive capability are quantum mechanical confinement and Coulomb scattering. Surface roughness scattering is found to be very weak. In addition, thinner nanowire is more prone to Coulomb scattering exhibiting a reduced ON-current (ION). Simulation results show that silicon nanowires with a side length (width and depth) of 3 nm and a doping density of 1.5×1019 cm-3 produce satisfactory drive current.
