Thermodynamic and Kinetic Factors Controlling the Bi Incorporation in III-V Thin Films Grown by Metal-organic Vapor Phase Epitaxy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Thermodynamic and Kinetic Factors Controlling the Bi Incorporation in III-V Thin Films Grown by Metal-organic Vapor Phase Epitaxy write by Yingxin Guan. This book was released on 2017. Thermodynamic and Kinetic Factors Controlling the Bi Incorporation in III-V Thin Films Grown by Metal-organic Vapor Phase Epitaxy available in PDF, EPUB and Kindle. Bi-containing III-V alloys have been proposed as alternative candidates for near and mid-infrared optoelectronic applications in recent years stimulated by the large bandgap energy reduction arising from the Bi addition into the III-V matrix. Metal-organic vapor phase epitaxy (MOVPE) of Bi-containing III-V alloys has been explored covering from the studies on its fundamental growth kinetics to the heterostructure designs containing III-V-Bi layers. As a group V element with a large covalent radius, Bi incorporation in the III-V matrix is thermodynamically unflavored and subjected to phase-separation during the growth process. Low growth temperatures are required to slow down the surface kinetics that lead to the Bi droplets formation. At such low growth temperatures, the Bi incorporation in III-V systems is expected to be mainly controlled by a sequence of chemical reactions, which may be difficult to predict due to the large number of possible reaction pathways involved in the metal-organic precursor at the gas phase and on the surface. In this study, the equilibrium Bi solubility in the III-V semiconductors was explored to reveal the thermodynamic limitation for Bi incorporation and illustrate the possible approaches to enhance the Bi solubility through tuning the Gibbs free energy of the system by the epitaxial stain or additional element incorporation. MOVPE growth was also carried out systematically to study the important kinetic processes involved in the MOVPE growth of GaAs1-xBix and In1-yGayAs1-xBix. This research enriched our knowledge of the fundamental thermodynamics and kinetics associated with the Bi-containing III-Vs and their MOVPE growth, revealed practical approaches to enhance the Bi solubility in III-V matrix, and supported the future semiconductor heterostructure design utilizing the Bi-containing III-V alloys.
Metalorganic Vapor Phase Epitaxy (MOVPE)
Metalorganic Vapor Phase Epitaxy (MOVPE) - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Metalorganic Vapor Phase Epitaxy (MOVPE) write by Stuart Irvine. This book was released on 2019-08-27. Metalorganic Vapor Phase Epitaxy (MOVPE) available in PDF, EPUB and Kindle. Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy
Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy write by Jen-Wu Huang. This book was released on 1996. Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy available in PDF, EPUB and Kindle.
Growth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources
Growth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Growth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources write by Bingwen Liang. This book was released on 1993. Growth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources available in PDF, EPUB and Kindle.
A Comparative Analysis of Chemical Vapor Deposition Techniques for the Growth of III-V Epitaxial Films
A Comparative Analysis of Chemical Vapor Deposition Techniques for the Growth of III-V Epitaxial Films - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook A Comparative Analysis of Chemical Vapor Deposition Techniques for the Growth of III-V Epitaxial Films write by Timothy J. Anderson. This book was released on 1988. A Comparative Analysis of Chemical Vapor Deposition Techniques for the Growth of III-V Epitaxial Films available in PDF, EPUB and Kindle. A program to compare the chloride, hydride and metal organic chemical vapor deposition techniques is described. A deposition system capable of depositing films by all three techniques was constructed and equipped with a modulated molecular beam mass spectrometer and, more recently, A Raman spectrometer. The thermal decomposition kinetics of NH3, PH3 and AsH3 were measured and the results applied to reactor operation. The hydride source region was analyzed and design procedure established. The unintentional incorporation of Si in GaAs and InP with the MOCVD process was investigated and methods of reducing these levels suggested. Substrates preparation procedures were compared using UHV surface analysis tools. A significatn amount of hydrogen was found in GaAs (100) substrates. Keywords: Vapor phase epitaxy, III-V semiconductors, Thin films, Ammonia, Phosphides, Gallium arsenides. (MJM).
