Zirconium-doped Hafnium Oxide Based Ferroelectric Materials for Memory Applications - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Zirconium-doped Hafnium Oxide Based Ferroelectric Materials for Memory Applications write by Fei Huang (Researcher in electrical engineering). This book was released on 2023. Zirconium-doped Hafnium Oxide Based Ferroelectric Materials for Memory Applications available in PDF, EPUB and Kindle. As data processing and storage needs continue to grow at a rapid pace, the development of innovative memory technologies is crucial. The discovery of ferroelectricity in hafnia (HfO2)-based materials has garnered significant attention in both academia and industry, owing to their potential to revolutionize non-volatile memory (NVM) technology and enable novel computing architectures. HfO2-based ferroelectric materials offer advantages over conventional perovskite oxides, such as low-temperature synthesis and conformal growth in three-dimensional structures on silicon, making them compatible with complementary metal-oxide-semiconductor (CMOS) technology and ideal for device scaling. However, several challenges still exist for implementing ferroelectric HfO2 in commercial products, such as polarization variation during cycling (wake-up effect), high operation voltage, compatibility with back-end-of-line (BEOL) processing temperatures, and low memory density. In this dissertation, I tackled the challenges outlined above. I began by focusing on the Hf0.5Zr0.5O2 (HZO) material itself and addressing the wake-up effect through the introduction of an HfO2 buffer layer at the HZO/electrode interface. Subsequently, I developed a new measurement setup capable of directly measuring individual nm-sized devices, which enabled investigating the scaling effect in HZO-based ferroelectric capacitors. Through my research, I was able to demonstrate excellent ferroelectricity and reliability in ultra-thin HZO (4 nm) capacitors with molybdenum (Mo) electrodes. These capacitors exhibited low operation voltage, wake-up-free behavior, high endurance, and low RTA temperatures, making them highly desirable for practical applications. I also studied the size scaling effect down to 65 nm × 45 nm devices, where I observed ultra-high remanent polarization (2Pr) for the first time at this scale. In addition to exploring two-dimensional scaling to improve density, I also proposed a hybrid structure for 4 bits/cell storage, increasing the multi-bit capability in a single cell.
Ferroelectricity in Doped Hafnium Oxide
Ferroelectricity in Doped Hafnium Oxide - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Ferroelectricity in Doped Hafnium Oxide write by Uwe Schroeder. This book was released on 2019-03-27. Ferroelectricity in Doped Hafnium Oxide available in PDF, EPUB and Kindle. Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Hafnium Oxide Based Ferroelectric Materials for Memory Applications
Hafnium Oxide Based Ferroelectric Materials for Memory Applications - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Hafnium Oxide Based Ferroelectric Materials for Memory Applications write by Zhouchangwan Yu. This book was released on 2022. Hafnium Oxide Based Ferroelectric Materials for Memory Applications available in PDF, EPUB and Kindle. Innovations of memory technologies are essential for addressing the future needs of data processing and storage. The discovery of ferroelectricity in hafnia (HfO2)-based materials has led the re-emergence of ferroelectric memories in advanced semiconductor technologies, with the potential to reshape the technology landscape and to enable novel computing architectures. Ferroelectric HfO2 is promising for non-volatile memories (NVM) due to its ability to scale down to ultra-thin films and very small device dimensions. However, challenges are still present for implementation of ferroelectric HfO2 in commercial products developed for embedded memories, including limited programming cycle endurance and compatibility with the back-end-of-line (BEOL) processing temperature. This dissertation presents innovations at the material and device levels to realize high endurance and low thermal budget ferroelectric memories, followed by advanced material characterizations to probe the mechanisms behind. First, I will demonstrate an experimental investigation of ferroelectricity in CeO2 doped Hf0.5Zr0.5O2 (HZO) thin films.1 I will present an analysis encompassing measurements of switchable polarization, cycling endurance, stress-induced leakage current (SILC) and photoelectric effects to provide a comprehensive understanding of CeO2 doping effects on the conduction mechanism and reliability of CeO2-doped HZO polarization switching. Second, I will report an investigation of the crystal structure of ferroelectric HZO films as a function of atomic layer deposition (ALD) temperature. Our results suggests that optimization of HZO thin film synthesis defined by the ALD deposition temperature not only produces films with the highest ferroelectric polarization, but can achieve this at the low thermal budgets necessary for incorporation of ferroelectric HZO in BEOL devices.
Internal Photoemission Spectroscopy
Internal Photoemission Spectroscopy - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Internal Photoemission Spectroscopy write by Valeri V. Afanas'ev. This book was released on 2014-02-22. Internal Photoemission Spectroscopy available in PDF, EPUB and Kindle. The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
Lead-Free Piezoelectrics
Lead-Free Piezoelectrics - read free eBook in online reader or directly download on the web page. Select files or add your book in reader. Download and read online ebook Lead-Free Piezoelectrics write by Shashank Priya. This book was released on 2011-11-19. Lead-Free Piezoelectrics available in PDF, EPUB and Kindle. Ecological restrictions in many parts of the world are demanding the elimination of Pb from all consumer items. At this moment in the piezoelectric ceramics industry, there is no issue of more importance than the transition to lead-free materials. The goal of Lead-Free Piezoelectrics is to provide a comprehensive overview of the fundamentals and developments in the field of lead-free materials and products to leading researchers in the world. The text presents chapters on demonstrated applications of the lead-free materials, which will allow readers to conceptualize the present possibilities and will be useful for both students and professionals conducting research on ferroelectrics, piezoelectrics, smart materials, lead-free materials, and a variety of applications including sensors, actuators, ultrasonic transducers and energy harvesters.
